Microstructure analysis in strained-InGaN/GaN multiple quantum wells
Identifieur interne : 000E07 ( Chine/Analysis ); précédent : 000E06; suivant : 000E08Microstructure analysis in strained-InGaN/GaN multiple quantum wells
Auteurs : RBID : Pascal:09-0135579Descripteurs français
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Abstract
The barrier thickness effect on the energy and microstructure properties of InGaN/GaN multiple quantum wells is investigated with Stillinger-Weber potential. The calculation indicates that the energy of a quantum well increases as the GaN barrier thickness rises, and that Ga-N and In-N bonds are shrunk with respect to those of random InGaN alloy. Moreover, a critical value of the barrier thickness exits. If the barrier thickness exceeds the critical value, the bond length of Ga-N in quantum wells reduces as a function of indium concentration. This singular behavior of Ga-N bond is analyzed with a force balance model.
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The calculation indicates that the energy of a quantum well increases as the GaN barrier thickness rises, and that Ga-N and In-N bonds are shrunk with respect to those of random InGaN alloy. Moreover, a critical value of the barrier thickness exits. If the barrier thickness exceeds the critical value, the bond length of Ga-N in quantum wells reduces as a function of indium concentration. 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All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0135579</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronics journal</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The barrier thickness effect on the energy and microstructure properties of InGaN/GaN multiple quantum wells is investigated with Stillinger-Weber potential. The calculation indicates that the energy of a quantum well increases as the GaN barrier thickness rises, and that Ga-N and In-N bonds are shrunk with respect to those of random InGaN alloy. Moreover, a critical value of the barrier thickness exits. If the barrier thickness exceeds the critical value, the bond length of Ga-N in quantum wells reduces as a function of indium concentration. 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